Excess carrier lifetime in electron irradiated p-type 4H-SiC epilayers after annealing

Kato, Masashi*; Matsushita, Yoshinori*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
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Meeting title	:	2010年(平成22年)春季第57回応用物理学関係連合講演会
Held date	:	2010/03
Location (city)	:	平塚
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Registration No. : BB20093098
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