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Operation of two-dimensional gas detector using micro-pixel detector element under high pressure for neutron measurement

マイクロピクセル素子を用いた中性子二次元ガス検出器の開発

藤 健太郎  ; 山岸 秀志*; 坂佐井 馨  ; 中村 龍也  ; 曽山 和彦  

To, Kentaro; Yamagishi, Hideshi*; Sakasai, Kaoru; Nakamura, Tatsuya; Soyama, Kazuhiko

これまで開発してきた素子よりもさらに耐電圧特性の優れた改良型マイクロピクセル型検出素子を作製し、中性子を用いて特性評価を行った。ここで素子の特性を評価するための中性子照射下での検出器システムとして、耐圧容器,個別読み出し型増幅・波形整形・波高弁別基板,光信号伝送装置,位置取得用エンコーダ,データ収集装置を製作した。ガス増幅率を測定したところ、印加電圧670V,ガス圧5atm(He分圧4.5atm, CF$$_{4}$$分圧0.5atm)において280であった。この素子を用いて連続動作を確認したところ、120時間動作してもそのガスゲインに変動は生じなかった。ここで、ガスゲインの二次元位置における均一性は3.3%であった。

An improved micro-pixel detector element was fabricated, and neutron irradiation experiments were conducted. The micro-pixel detector element was fabricated using printed circuit board (PCB) technologies. Therefore, it is easy to fabricate and reproduce detector element with a large number of pixels. A gas-based neutron detection system capable of individual line readout, consisting of the developed detector element, gas chamber, amplifier-shaper-discriminator boards, optical signal transmission device, and a fast data acquisition device, was constructed for the experiment. The measured gas gain was approximately 280 at the total pressure of 5 atm (4.5 atm of $$^{3}$$He and 0.5 atm of CF$$_{4}$$), and supplied voltage of 670 V. The gas gain did not decrease (due to the charge-up effect) when the detection system was operated for 120 h. The average gain spread in two-dimensional imaging was 3.3%.

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