Electrical- and emission- characteristics dependence on ion implantation conditions of Eu-doped light emitting AlGaN/GaN HEMT

Eu注入した発光AlGaN/GaN HEMTにおける電気的特性と発光特性のイオン注入条件依存性

秦 貴幸*; 岡田 浩*; 若原 昭浩*; 古川 雄三*; 佐藤 真一郎; 大島 武

Hata, Takayuki*; Okada, Hiroshi*; Wakahara, Akihiro*; Furukawa, Yuzo*; Sato, Shinichiro; Oshima, Takeshi

Electrical- and emission characteristics dependence of the AlGaN/GaN HEMT samples on ion-implantation conditions were investigated in order to enhance the light emitting efficiency. The samples were implanted with 100 or 200 keV Eu ions at TIARA, JAEA, and then were annealed at 1100 C in N:NH2:1 for 2 minutes. Ohmic and Schottky gate formation was made by the conventional lift-off process. As a result, the conductance of the samples implanted with 200 keV Eu ions was two orders higher than the 100 keV Eu implanted samples. The result suggests that the Eu implantation conditions should be optimized by considering Eu ions and radiation damage profile in the samples.