Increase of hole concentration in Al-doped 6H-SiC epilayer by 100 keV electron irradiation or annealing

Yanagisawa, Hideki*; Nishino, Kozo*; Nojiri, Takunori*; Matsuura, Hideharu*; Onoda, Shinobu; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第18回講演会
Held date	:	2009/12
Location (city)	:	神戸
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Cooperating Institute	:	大阪電気通信大学

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Registration No. : BB20093815
JAEA Abstracts No. :
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