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Photo- and dark conductivity variations of solar cell quality a-Si:H thin films irradiated with protons

陽子線照射した太陽電池品質の水素化アモルファスシリコン薄膜の光伝導度及び暗伝導度変化

佐藤 真一郎; 齋 均*; 大島 武; 今泉 充*; 島崎 一紀*; 近藤 道雄*

Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*

We investigated conductivity variations of hydrogenated amorphous silicon thin films during and following 10 MeV proton irradiations at the fluences of 2.0$$times10^{13}$$ or 4.0$$times10^{14}$$/cm$$^{2}$$. In addition, we compared behaviors of the light-induced degradations before and after 10 MeV proton irradiations. The results showed that the conductivity during the irradiation initially increased and after that decreased. These conductivity behaviors were in good agreement with the photoconductivity variations. The conductivity value never fell below the value before the irradiation even in the case of 4.0$$times10^{14}$$/cm$$^{2}$$ irradiation.

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