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Study of ion-beam-induced damage and luminescence properties in terbium-implanted AlGaN

テルビウム注入したAlGaNのイオンビーム誘起損傷と発光特性に関する研究

Park, J.-H.*; 若原 昭浩*; 岡田 浩*; 古川 雄三*; Kim, Y.-T.*; Chang, H.-J.*; Song, J.*; Shin, S.*; Lee, J.-H.*; 佐藤 真一郎; 大島 武

Park, J.-H.*; Wakahara, Akihiro*; Okada, Hiroshi*; Furukawa, Yuzo*; Kim, Y.-T.*; Chang, H.-J.*; Song, J.*; Shin, S.*; Lee, J.-H.*; Sato, Shinichiro; Oshima, Takeshi

Terbium (Tb) ions were implanted into Al$$_{0.35}$$Ga$$_{0.65}$$N epitaxial layers at room temperature to investigate ion-beam-induced damage and luminescence properties at various doses of $$1times 10^{12}$$ - $$2.8times 10^{16}$$ Tb/cm$$^2$$. Rutherford backscattering spectrometry/channeling (RBS/channeling) reveals that on-beam-induced damage level steeply increases and that the damage cannot be fully recovered even after rapid thermal annealing at 1100 $$^{circ}$$C, when the dose exceeds $$5times 10^{14}$$ Tb/cm$$^2$$. On the other hand, cathodoluminescence (CL) intensity related to Tb$$^{3+}$$ transitions increased initially and saturated above a dose of $$1times 10^{13}$$ Tb/cm$$^2$$. The results suggest that Tb-related luminescence properties are much susceptible to defects and nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density.

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パーセンタイル:92.7

分野:Physics, Applied

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