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Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

イオンチャンネリングを利用したGe(111)上での鉄ホイスラー合金薄膜のエピタキシーの研究

前田 佳均; 鳴海 一雅; 境 誠司; 寺井 慶和*; 浜屋 宏平*; 佐道 泰造*; 宮尾 正信*

Maeda, Yoshihito; Narumi, Kazumasa; Sakai, Seiji; Terai, Yoshikazu*; Hamaya, Kohei*; Sado, Taizo*; Miyao, Masanobu*

We investigate the axial orientation of epitaxy of Fe$$_{2}$$CoSi with a (A, C) site preference on Ge(111) by using ion channeling, and discuss dominant factors for epitaxy of Fe$$_{2}$$MnSi and Fe$$_{2}$$CoSi on Ge(111). We conclude that each dominant factor of epitaxy of Fe$$_{2}$$MnSi and Fe$$_{2}$$CoSi on Ge(111) comes from an atomic displacement due to different preference of site occupations.

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パーセンタイル:68.26

分野:Materials Science, Multidisciplinary

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