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Study the effects of proton irradiation on GaAs/Ge solar cells

Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesuky, T.*; Ghitas, A.*

Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated with protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar sells.

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