Time-dependent collected charges of 6H-SiC pn diodes measured using alpha particles

アルファ粒子を用いて観測した6H-SiC pnダイオードの過渡電荷収集

岩本 直也; 小野田 忍; 牧野 高紘; 大島 武; 児島 一聡*; 小泉 淳*; 内田 和男*; 野崎 眞次*

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

Time-dependent collected charges of 6H-SiC (Silicon Carbide) pn diodes have been studied by using alpha particles. To investigate the impact of electron irradiation-induced defects on the time-dependent collected charges, temperatures of the samples were varied from 180 K to 310 K during the measurements. For electron-irradiated diode, the collected charges increase promptly and continue to increase slightly for tens of microseconds. The slight increases of charges are results of carrier detrapping by the electron irradiation-induced defects. It is also found that amount of detrapped charges depends on the temperatures. Two clear peaks at 205 K and 280 K are found for the electron-irradiated diode. These peaks are considered to be attributed to the defects which located at two different energy levels in the band gap.