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Report No.

Real-time photoemission spectroscopy measurements of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka ; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

A 3$$times$$2 reconstruction surface is made at the Si(113) surface. The oxidation processes by O$$_{2}$$ molecules were observed by real-time photoelectron spectroscopy. All experiments were conducted using the JAEA surface chemistry experimental station at BL23SU in the SPring-8. Time evolution of Si2p and O1s photoelectron spectra were observed. A suboxide Si$$^{3+}$$ component ratio increased during oxidation as the Si(110) surface case. Both of Si(110) and (113) surfaces have a pentagon structure on the reconstruction surface. The increase of Si$$^{3+}$$ component in the oxidation of the Si(11n) surface can be understood as competing formation of an SiO$$_{2}$$/Si(001) type interface and an SiO$$_{2}$$/Si(111) type interface.



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