Real-time photoemission spectroscopy measurements of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka ; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

A 32 reconstruction surface is made at the Si(113) surface. The oxidation processes by O $_{2}$ molecules were observed by real-time photoelectron spectroscopy. All experiments were conducted using the JAEA surface chemistry experimental station at BL23SU in the SPring-8. Time evolution of Si2p and O1s photoelectron spectra were observed. A suboxide Si $^{3+}$ component ratio increased during oxidation as the Si(110) surface case. Both of Si(110) and (113) surfaces have a pentagon structure on the reconstruction surface. The increase of Si $^{3+}$ component in the oxidation of the Si(11n) surface can be understood as competing formation of an SiO $_{2}$ /Si(001) type interface and an SiO $_{2}$ /Si(111) type interface.

Language	:	Japanese
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Meeting title	:	2010年秋季第71回応用物理学会学術講演会
Held date	:	2010/09
Location (city)	:	長崎
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Cooperating Institute	:	横浜国立大学

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Registration No. : BB20102032
JAEA Abstracts No. :
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