Time-resolved X-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

Sb/GaAs層上の高密度InAs量子ドットの時分割X線回折測定及びSb照射成長中断による肥大化の抑制

角田 直輝*; 海津 利行*; 高橋 正光; 藤川 誠司; 山口 浩一*

Kakuda, Naoki*; Kaizu, Toshiyuki*; Takahashi, Masamitsu; Fujikawa, Seiji; Yamaguchi, Koichi*

Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI.