Electric conductivity of device grade hydrogenated amorphous silicon thin films irradiated with protons

プロトン照射したデバイス品質の水素化アモルファスシリコン薄膜の電気伝導度

佐藤 真一郎; 齋 均*; 大島 武; 今泉 充*; 島崎 一紀*; 近藤 道雄*

Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*

In this paper, we present in-situ measurement results of the conductivity variations of hydrogenated amorphous silicon thin films during and after 10 MeV proton irradiations. The results showed that the conductivities drastically increased at first and turned into decrease with further irradiation. On the other hand, the photosensitivity had a minimum value at around a maximum value of the conductivity. This fact indicates that the conductive carriers generated by light illumination are not dominant to the electric conduction in this regime, and thus the extremely high conductivity cannot be explained by a general interpretation of radiation induced conductivity.