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Spectroscopic characterization of $$beta$$-FeSi$$_{2}$$ single crystals and homoepitaxial $$beta$$-FeSi$$_{2}$$ films by XPS and XAS

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for $$beta$$-FeSi$$_{2}$$ single crystals and homoepitaxial $$beta$$-FeSi$$_{2}$$ films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial $$beta$$-FeSi$$_{2}$$ films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous $$beta$$-FeSi$$_{2}$$ films can be grown on the $$beta$$-FeSi$$_{2}$$ single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states nondestructively.

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