Refine your search:     
Report No.

Spectroscopic characterization of $$beta$$-FeSi$$_{2}$$ single crystals and homoepitaxial $$beta$$-FeSi$$_{2}$$ films by XPS and XAS

Esaka, Fumitaka; Yamamoto, Hiroyuki; Udono, Haruhiko*; Matsubayashi, Nobuyuki*; Yamaguchi, Kenji; Shamoto, Shinichi; Magara, Masaaki; Kimura, Takaumi

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for $$beta$$-FeSi$$_{2}$$ single crystals and homoepitaxial $$beta$$-FeSi$$_{2}$$ films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial $$beta$$-FeSi$$_{2}$$ films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous $$beta$$-FeSi$$_{2}$$ films can be grown on the $$beta$$-FeSi$$_{2}$$ single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states nondestructively.



- Accesses




Category:Chemistry, Physical



[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.