Soft error rate in SOI SRAM with technology node of 90 nm using oxygen ion probe

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Takai, Mikio*; Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*

no abstracts in English

Language	:	Japanese
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Meeting title	:	第5回高崎量子応用研究シンポジウム
Held date	:	2010/10
Location (city)	:	高崎
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	大阪大学極限量子科学研究センター

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Registration No. : BB20102624
JAEA Abstracts No. :
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