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Comparison of measured effective attenuation length in SiO$$_{2}$$ by SR-XPS with calculated inelastic mean free path

Inoue, Keisuke*; Jinno, Muneaki; Teraoka, Yuden

In this work we compared calculated inelastic mean free path and measured effective attenuation length of photoelectron in SiO$$_{2}$$ by SR-XPS. Si(001) substrates with SiO$$_{2}$$ ultra-thin film were used as samples. In the synchrotron radiation energy from 400 eV to 1700 eV, Si 2P spectra was measured and energy dependence on effective attenuation length was investigated. Effective attenuation length does not depend on SiO$$_{2}$$ film thickness so that the film quality was constant. Effective attenuation length varied depending on dealing of suboxides (Si$$^{+}$$, Si$$^{2+}$$, Si$$^{3+}$$) in bulk(Si substrate), SiO$$_{2}$$ film or neglect. When suboxides are included in bulk, effective attenuation length is closest to TPP-2M calculation of inelastic mean free path.

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Japanese

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Meeting title

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第6回励起ナノプロセス研究会

Held date

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2010/11

Location (city)

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堺

Location (country)

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日本

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Keywords

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no keyword

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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Accesses

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- Accesses

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