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Energy band structure of thermally grown SiO$$_{2}$$/4H-SiC interfaces and its modulation induced by post-oxidation treatments

Kirino, Takashi*; Kagei, Yusuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

In this study, we investigated the energy band structure of thermally grown SiO$$_{2}$$/SiC structures fabricated on (0001) Si-face and (000-1) C-face substrates by means of synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and electrical characterization of SiC-MOS capacitors. Thereafter, the intrinsic and extrinsic effects of interface structure and electrical defects on the band offset modulation are discussed. Postoxidation treatment modulated an energy band structure of SiC-MOS devices. The trade-off relation between the conduction band offset and interface quality needs to be considered.



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