/4H-SiC interfaces and its modulation induced by post-oxidation treatments/4H-SiC界面のエネルギーバンド構造と後処理によって誘起されるその変化桐野 崇史*; 景井 悠介*; 吉越 章隆 
; 寺岡 有殿; 箕谷 周平*; 中野 佑紀*; 中村 孝*; 細井 卓治*; 志村 考功*; 渡部 平司*
Kirino, Takashi*; Kagei, Yusuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
In this study, we investigated the energy band structure of thermally grown SiO/SiC structures fabricated on (0001) Si-face and (000-1) C-face substrates by means of synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS) and electrical characterization of SiC-MOS capacitors. Thereafter, the intrinsic and extrinsic effects of interface structure and electrical defects on the band offset modulation are discussed. Postoxidation treatment modulated an energy band structure of SiC-MOS devices. The trade-off relation between the conduction band offset and interface quality needs to be considered.
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: | 41st IEEE Semiconductor Interface Specialists Conference (SISC 2010) |
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: | San Diego |
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