Local structure around Ge atoms in IV-VI ferromagnetic semiconductor Ge $_{0.6}$ Mn $_{0.4}$ Te by X-ray fluorescence holography

Happo, Naohisa*; Tekehara, Yuki*; Fujiwara, Makoto*; Tanaka, Koichi*; Semba, Shinya*; Hosokawa, Shinya*; Hayashi, Koichi*; Hu, W.; Suzuki, Motohiro*; Asada, Hironori*

Local atomic structure around Ge atoms in Ge $_{1-x}$ Mn $_{x}$ Te thin film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. Obtained atomic image suggests that the Ge position is not stable in the exact positions of the anion fcc sublattice of the anion, and reveals the fluctuation of the Ge positions or the existence of cation vacancies.

Language	:	English
Journal	:	e-Journal of Surface Science and Nanotechnology (Internet)
Volume	:	9
Number	:
Pages	:	p.247 - 250
Publication Year/Month	:	2011/06
Meeting title	:	原子分解能ホログラフィーワークショップ
Held date	:	2010/11
Location (city)	:	仙台
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1380/ejssnt.2011.247
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : BB20103919
JAEA Abstracts No. : 39000963
Paper Submission No. : 9211

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Local structure around Ge atoms in IV-VI ferromagnetic semiconductor GeMnTe by X-ray fluorescence holography

Local structure around Ge atoms in IV-VI ferromagnetic semiconductor Ge $_{0.6}$ Mn $_{0.4}$ Te by X-ray fluorescence holography