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Local structure around Ge atoms in IV-VI ferromagnetic semiconductor Ge$$_{0.6}$$Mn$$_{0.4}$$Te by X-ray fluorescence holography

蛍光X線ホログラフィーによるIV-VI族強磁性半導体Ge$$_{0.6}$$Mn$$_{0.4}$$Te中のGe原子まわりの局所構造解析

八方 直久*; 竹原 祐紀*; 藤原 真*; 田中 公一*; 仙波 伸也*; 細川 伸也*; 林 好一*; Hu, W.; 鈴木 基寛*; 浅田 裕法*

Happo, Naohisa*; Tekehara, Yuki*; Fujiwara, Makoto*; Tanaka, Koichi*; Semba, Shinya*; Hosokawa, Shinya*; Hayashi, Koichi*; Hu, W.; Suzuki, Motohiro*; Asada, Hironori*

Local atomic structure around Ge atoms in Ge$$_{1-x}$$Mn$$_{x}$$Te thin film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. Obtained atomic image suggests that the Ge position is not stable in the exact positions of the anion fcc sublattice of the anion, and reveals the fluctuation of the Ge positions or the existence of cation vacancies.

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