検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

大きな格子不整合系での埋もれたヘテロ界面水素層の解析

山崎 竜也; 朝岡 秀人; 田口 富嗣; 山本 春也; 山崎 大; 丸山 龍治; 武田 全康; 社本 真一

Yamazaki, Tatsuya; Asaoka, Hidehito; Taguchi, Tomitsugu; Yamamoto, Shunya; Yamazaki, Dai; Maruyama, Ryuji; Takeda, Masayasu; Shamoto, Shinichi

Si基板との格子不整合の緩衝域として水素単原子バッファー層を挿入し、大きな格子不整合を克服した薄膜成長に成功した。このユニークな薄膜成長を可能にする界面の構造解析を目的とし、薄膜成長後の界面における水素層の存在を、中性子反射率測定と共鳴核反応分析法により捉えることができたので、それら複合解析の結果を発表する。

We succeeded in realizing the epitaxial growth of a Sr layer on Si(111) with an atomically abrupt heterointerface - in spite of its large lattice mismatch (12%) with Si - by introducing a monoatomic layer of H on Si. In order to identify the buried H, we carried out a combination analysis involving neutron reflectometry and resonant nuclear reaction of $$^{1}$$H($$^{15}$$N,$$alpha$$$$gamma$$)$$^{12}$$C analysis. We found different neutron reflectivity profiles resulting from a contrast variation between the H and D atoms at the buried heterointerface. Furthermore, the depth $$gamma$$-ray intensity profiles revealed that the H at the heterointerface acts as an effective buffer layer that enables it to manage the highly mismatched epitaxy on Si.

Access

:

- Accesses

InCites™

:

パーセンタイル:92.94

分野:Materials Science, Multidisciplinary

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.