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Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

Yamazaki, Tatsuya; Asaoka, Hidehito  ; Taguchi, Tomitsugu; Yamamoto, Shunya; Yamazaki, Dai  ; Maruyama, Ryuji   ; Takeda, Masayasu  ; Shamoto, Shinichi  

We succeeded in realizing the epitaxial growth of a Sr layer on Si(111) with an atomically abrupt heterointerface - in spite of its large lattice mismatch (12%) with Si - by introducing a monoatomic layer of H on Si. In order to identify the buried H, we carried out a combination analysis involving neutron reflectometry and resonant nuclear reaction of $$^{1}$$H($$^{15}$$N,$$alpha$$$$gamma$$)$$^{12}$$C analysis. We found different neutron reflectivity profiles resulting from a contrast variation between the H and D atoms at the buried heterointerface. Furthermore, the depth $$gamma$$-ray intensity profiles revealed that the H at the heterointerface acts as an effective buffer layer that enables it to manage the highly mismatched epitaxy on Si.

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Category:Materials Science, Multidisciplinary

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