Bulk electronic state of YbRhSi studied by soft X-ray angle-resolved photoemission spectroscopy

Yasui, Akira; Fujimori, Shinichi ; Kawasaki, Ikuto ; Okane, Tetsuo ; Takeda, Yukiharu ; Saito, Yuji ; Lapertot, G.*; Knebel, G.*; Matsuda, Tatsuma; Haga, Yoshinori ; Yamagami, Hiroshi

In recent years, YbRhSi has been attracted much attention because it can be turned through a quantum critical point (QCP) by various small changes of control parameters. There are many angle-resolved photoemission spectroscopy (ARPES) studies for YbRhSi by using low-energy incident photons to understand the nature of the QCP. However, large surface contributions were observed in their spectra, and its bulk electronic structure has not been understood experimentally. We have performed the soft X-ray ARPES for YbRhSi to obtain its bulk valence-band structure. Obtained valence-band structure is similar to the calculated result of LuRhSi within a local-density approximation, while the Yb 4 bands are observed near Fermi level and are hybridized with conduction bands.

Language	:	English
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Meeting title	:	International Conference on Strongly Correlated Electron Systems (SCES 2011)
Held date	:	2011/08
Location (city)	:	Cambridge
Location (country)	:	U.K.
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20111300
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