Electrically Detected Magnetic Resonance (EDMR) studies of SiC-SiO interfaces

Umeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Morishita, Norio*; Oshima, Takeshi; Ezaki, Kana*; Isoya, Junichi*

Metal-Oxide (SiO)-Semiconductor (MOS) structures fabricated on Silicon Carbide (SiC) were studied using Electrically Detected Magnetic Resonance technique (EDMR). The residual Carbons are expected to be near the interface between SiC and SiC-SiOSiO, which is different from Si-SiO interface. By the EDMR measurements at 50K, a defect center related to C dangling bonds which is called P center and also a center related to C dangling bonds terminated by hydrogens or nitrogens (Ns) which is called P were observed. In addition, a center related to N donor which is called Nh exist near the interface from N-treatment samples. This suggests that carrier concentration increases near the interface due to the introduction of donors, and as a result, the channel conductance increases.