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Behavior of nitrogen atoms in SiC-SiO$$_{2}$$ interfaces studied by electrically detected magnetic resonance

Umeda, Takahide*; Ezaki, Kana*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio*; Isoya, Junichi*

By electrically detected magnetic resonance spectroscopy under low-temperature, the microscopic behavior of nitrogen atoms in the SiC-SiO$$_{2}$$ interface regions of n-channel 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. As a result, it was found that shallow interface states were eliminated by nitrogen atoms located near the interface. Also, nitrogen atoms showed diffusion into the channel region of the MOSFETs, and acted as shallow donors. These two behaviors enable nitrogen atoms to enhance the channel mobility of electrons in SiC MOSFETs.

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Category:Physics, Applied

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