Synchrotron radiation photoemission study of Ge $_{3}$ N $_{4}$ /Ge structures formed by plasma nitridation

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Yoshigoe, Akitaka ; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Chemical bonding states and energy band alignment of pure germanium nitride (Ge $_{3}$ N $_{4}$ ) formed on a Ge(100) substrate were characterized by synchrotron radiation photoemission spectroscopy (SR-PES). The core-level shift of 2.31 eV originating from Ge-N bonds (Ge $^{4+}$ ) with respect to the bulk Ge 3d $_{5/2}$ peak (Ge $^{0+}$ ) was determined. In situ SR-PES study on changes in Ge 3d, N 1s, and O 1s core-level spectra during thermal annealing revealed that oxidized surface layer on Ge $_{3}$ N $_{4}$ could be selectively removed at around 773 K, which was 50 deg lower than the decomposition temperature of Ge $_{3}$ N $_{4}$ . The Ge $_{3}$ N $_{4}$ energy bandgap of 3.68 eV was experimentally determined. The valence band offset at a Ge $_{3}$ N $_{4}$ /Ge(100) interface was also estimated to be 1.65 eV, and thus, the energy band alignment between Ge $_{3}$ N $_{4}$ dielectrics and Ge substrate was determined.

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	50
Number	:	10
Pages	:	p.10PE03_1 - 10PE03_5
Publication Year/Month	:	2011/10
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Paper URL	:	https://doi.org/10.1143/JJAP.50.10PE03
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学

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Registration No. : AA20110613
JAEA Abstracts No. : 40000021
Paper Submission No. : 9944

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Synchrotron radiation photoemission study of GeN/Ge structures formed by plasma nitridation

Synchrotron radiation photoemission study of Ge $_{3}$ N $_{4}$ /Ge structures formed by plasma nitridation