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Synchrotron radiation photoemission study of Ge$$_{3}$$N$$_{4}$$/Ge structures formed by plasma nitridation

プラズマ窒化によって形成されたGe$$_{3}$$N$$_{4}$$/Ge構造の放射光光電子分光研究

細井 卓治*; 朽木 克博*; 岡本 学*; 吉越 章隆 ; 寺岡 有殿; 志村 考功*; 渡部 平司*

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Chemical bonding states and energy band alignment of pure germanium nitride (Ge$$_{3}$$N$$_{4}$$) formed on a Ge(100) substrate were characterized by synchrotron radiation photoemission spectroscopy (SR-PES). The core-level shift of 2.31 eV originating from Ge-N bonds (Ge$$^{4+}$$) with respect to the bulk Ge 3d$$_{5/2}$$ peak (Ge$$^{0+}$$) was determined. In situ SR-PES study on changes in Ge 3d, N 1s, and O 1s core-level spectra during thermal annealing revealed that oxidized surface layer on Ge$$_{3}$$N$$_{4}$$ could be selectively removed at around 773 K, which was 50 deg lower than the decomposition temperature of Ge$$_{3}$$N$$_{4}$$. The Ge$$_{3}$$N$$_{4}$$ energy bandgap of 3.68 eV was experimentally determined. The valence band offset at a Ge$$_{3}$$N$$_{4}$$/Ge(100) interface was also estimated to be 1.65 eV, and thus, the energy band alignment between Ge$$_{3}$$N$$_{4}$$ dielectrics and Ge substrate was determined.

使用言語

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English

掲載資料名

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Japanese Journal of Applied Physics

巻

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50

号

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10

ページ数

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p.10PE03_1 - 10PE03_5

発行年月

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2011/10

発表会議名

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開催年月

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開催都市

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開催国

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キーワード

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no keyword

特許データ

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PDF

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論文URL

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https://doi.org/10.1143/JJAP.50.10PE03

研究データの公開先DOI

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使用施設

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SPring-8(大型放射光施設)

広報プレスリリース

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論文解説記事
(成果普及情報誌)

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受委託・共同研究相手機関

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大阪大学

Access

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- Accesses

InCites™

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パーセンタイル：43.98

分野：Physics, Applied

Altmetrics

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