検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

Synchrotron radiation photoemission study of Ge$$_{3}$$N$$_{4}$$/Ge structures formed by plasma nitridation

プラズマ窒化によって形成されたGe$$_{3}$$N$$_{4}$$/Ge構造の放射光光電子分光研究

細井 卓治*; 朽木 克博*; 岡本 学*; 吉越 章隆; 寺岡 有殿; 志村 考功*; 渡部 平司*

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Chemical bonding states and energy band alignment of pure germanium nitride (Ge$$_{3}$$N$$_{4}$$) formed on a Ge(100) substrate were characterized by synchrotron radiation photoemission spectroscopy (SR-PES). The core-level shift of 2.31 eV originating from Ge-N bonds (Ge$$^{4+}$$) with respect to the bulk Ge 3d$$_{5/2}$$ peak (Ge$$^{0+}$$) was determined. In situ SR-PES study on changes in Ge 3d, N 1s, and O 1s core-level spectra during thermal annealing revealed that oxidized surface layer on Ge$$_{3}$$N$$_{4}$$ could be selectively removed at around 773 K, which was 50 deg lower than the decomposition temperature of Ge$$_{3}$$N$$_{4}$$. The Ge$$_{3}$$N$$_{4}$$ energy bandgap of 3.68 eV was experimentally determined. The valence band offset at a Ge$$_{3}$$N$$_{4}$$/Ge(100) interface was also estimated to be 1.65 eV, and thus, the energy band alignment between Ge$$_{3}$$N$$_{4}$$ dielectrics and Ge substrate was determined.

Access

:

- Accesses

InCites™

:

パーセンタイル:51.03

分野:Physics, Applied

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.