Observation of deep levels in p-type 4H-SiC induced by low-energy electron irradiation

Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第20回講演会
Held date	:	2011/12
Location (city)	:	名古屋
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Registration No. : BB20112268
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