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Positron annihilation study of 4H-SiC by Ge$$^+$$ implantation and subsequent thermal annealing

陽電子消滅法によるゲルマニウムイオン注入及び熱焼鈍した4H-SiCの研究

Yu, R. S.*; 前川 雅樹; 河裾 厚男; Wang, B. Y.*; Wei, L.*

Yu, R. S.*; Maekawa, Masaki; Kawasuso, Atsuo; Wang, B. Y.*; Wei, L.*

Positron annihilation in 800 keV Ge$$^+$$ implanted hexagonal SiC was studied by thermal annealing at temperatures ranging from 800 to 1400 $$^{circ}$$C. The variation in Doppler broadening $$S$$ values as a function of the incident positron energy suggests a broad distribution in the depth of vacancy defects in the implanted samples. Increasing the annealing temperature triggers the accumulation of vacancies into vacancy clusters. After annealing at 1400 $$^{circ}$$C, defects in the deep region of SiC are eliminated, and Ge precipitation is believed to appear in the sample at the same time. Though Ge has a much more negative positron affinity than SiC, positron annihilation coincidence Doppler broadening measurement reveals that a preferential trapping of positrons in Ge seems impossible.

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パーセンタイル:36.4

分野:Instruments & Instrumentation

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