Bias voltage dependence of tunneling magnetoresistance in granular C-Co films with current-perpendicular-to-plane geometry

CPP素子構造のグラニュラーC-Co薄膜におけるトンネル磁気抵抗の電圧依存性

境 誠司; 三谷 誠司*; 松本 吉弘; 圓谷 志郎; Avramov, P.; 大伴 真名歩; 楢本 洋*; 高梨 弘毅

Sakai, Seiji; Mitani, Seiji*; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, P.; Otomo, Manabu; Naramoto, Hiroshi*; Takanashi, Koki

Voltage-dependence of the tunneling magnetoresistance effect in the granular C-Co films has been investigated under the current-perpendicular-to-plane geometry. The transport measurements demonstrate that the granular C-Co films show unusually an exponential MR-V dependence. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the voltage drops between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can reasonably be expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C-Co compound with Co nanoparticles will lead to the unusual voltage and temperature dependence of the MR ratio and the spin polarization.