An Amorphous $rm SiO_{2}$ /4H-SiC(11-20) interface atomic model generated by first-principals molecular dynamics method

Miyashita, Atsumi; Onuma, Toshiharu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito

no abstracts in English

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第20回講演会
Held date	:	2011/12
Location (city)	:	名古屋
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	電力中央研究所

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Registration No. : BB20112263
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An Amorphous /4H-SiC(11-20) interface atomic model generated by first-principals molecular dynamics method

An Amorphous $rm SiO_{2}$ /4H-SiC(11-20) interface atomic model generated by first-principals molecular dynamics method