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Analysis of initial oxidation process of high-index Si surfaces using supersonic molecular beam, 2

Ono, Shinya*; Kanemura, Rui*; Abe, Sosuke*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka ; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

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