Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement

陽電子マイクロビームと電子ビーム誘起電流法を用いた半導体中欠陥の観察

前川 雅樹; 河裾 厚男

Maekawa, Masaki; Kawasuso, Atsuo

A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.