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Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-hall sensors

2DEG AlGaN/GaNマイクロホール素子の電磁特性に対する陽子線照射効果

岡田 浩*; Abderrahmane, A.*; 小出 将太*; 高橋 大樹*; 佐藤 真一郎; 大島 武; Sandhu, A.*

Okada, Hiroshi*; Abderrahmane, A.*; Koide, Shota*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*

The effects of 380 keV proton irradiation on AlGaN/GaN micro-Hall sensors were investigated by magnetoresistance measurements. The sheet resistance increased after irradiation at a proton dose of 1$$times$$10$$^{13}$$ cm$$^{-2}$$ due to the decrease of carrier mobility rather than the decrease of sheet carrier density. Our experiments showed that AlGaN/GaN two-dimensional electron gas (2DEG) structures were promising candidates for Hall sensors operable in harsh radiation environments.

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