岡田 浩*; Abderrahmane, A.*; 小出 将太*; 高橋 大樹*; 佐藤 真一郎; 大島 武; Sandhu, A.*
Okada, Hiroshi*; Abderrahmane, A.*; Koide, Shota*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
The effects of 380 keV proton irradiation on AlGaN/GaN micro-Hall sensors were investigated by magnetoresistance measurements. The sheet resistance increased after irradiation at a proton dose of 1
10
cm
due to the decrease of carrier mobility rather than the decrease of sheet carrier density. Our experiments showed that AlGaN/GaN two-dimensional electron gas (2DEG) structures were promising candidates for Hall sensors operable in harsh radiation environments.
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: | English |
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巻 |
: | 352 |
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ページ数 |
: | p.012010_1 - 012010_5 |
発行年月 |
: | 2012/03 |
発表会議名 |
: | Asia-Pacific Interdisciplinary Research Conference 2011 (AP-IRC 2011) |
開催年月 |
: | 2011/11 |
開催都市 |
: | Toyohashi |
開催国 |
: | Japan |
キーワード |
: | no keyword |
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受委託・共同研究相手機関 |
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Access |
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- Accesses |
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InCites™ |
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パーセンタイル：84.58 分野：Physics, Applied |
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