Okada, Hiroshi*; Abderrahmane, A.*; Koide, Shota*; Takahashi, Hiroki*; Sato, Shinichiro; Oshima, Takeshi; Sandhu, A.*
The effects of 380 keV proton irradiation on AlGaN/GaN micro-Hall sensors were investigated by magnetoresistance measurements. The sheet resistance increased after irradiation at a proton dose of 1
10
cm
due to the decrease of carrier mobility rather than the decrease of sheet carrier density. Our experiments showed that AlGaN/GaN two-dimensional electron gas (2DEG) structures were promising candidates for Hall sensors operable in harsh radiation environments.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 352 |
Number |
: | |
Pages |
: | p.012010_1 - 012010_5 |
Publication Year/Month |
: | 2012/03 |
Meeting title |
: | Asia-Pacific Interdisciplinary Research Conference 2011 (AP-IRC 2011) |
Held date |
: | 2011/11 |
Location (city) |
: | Toyohashi |
Location (country) |
: | Japan |
Paper URL |
: |
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Keywords |
: | no keyword |
Research Facility |
: | |
Cooperating Institute |
: |
Accesses |
: |
- Accesses |
|---|---|---|
InCites™ |
: |
Percentile:84.58 Category:Physics, Applied |
Altmetrics |
: |
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