In-situ X-ray diffraction during GaAs epitaxial growth on Si(001)

Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Hu, W.; Kozu, Miwa; Takahashi, Masamitsu; Oshita, Yoshio*

Molecular-beam epitaxial growth processes of GaAs on Si(001) was investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distribution around Si and GaAs 022 Bragg points in the reciprocal space was measured during growth by combination of an area detector and one-axis scan. At the initial stage of the growth, the average radius of GaAs islands, , and growth time, , were found to follow $Lpropto t^{1/2}$ in accordance with the growth limited by the binding of Ga with As at step edges.

Language	:	Japanese
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Meeting title	:	2012年秋季第73回応用物理学会学術講演会
Held date	:	2012/09
Location (city)	:	松山
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Cooperating Institute	:	宮崎大学; 豊田工業大学

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Registration No. : BB20121648
JAEA Abstracts No. :
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