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GaAs surface under molecular-beam epitaxial growth conditions

Takahashi, Masamitsu

Surface structures of GaAs(001) under growth conditions have been investigated using in situ X-ray diffraction. The atomic arrangements of GaAs(001) surface stabilized at an elevated temperature under as pressure were quantitatively determined in a molecular-beam epitaxy chamber integrated with an X-ray diffractometer. With the help of high angular resolution of synchrotron radiation, disordered structures appearing in the transition from (2$$times$$4) to other phases were clarified. Energy tunability of synchrotron X-rays allowed for element-specific analysis of the c(4$$times$$4) structure, providing direct evidence for Ga-As heterodimer formation.

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