GaAs surface under molecular-beam epitaxial growth conditions

Takahashi, Masamitsu

Surface structures of GaAs(001) under growth conditions have been investigated using in situ X-ray diffraction. The atomic arrangements of GaAs(001) surface stabilized at an elevated temperature under as pressure were quantitatively determined in a molecular-beam epitaxy chamber integrated with an X-ray diffractometer. With the help of high angular resolution of synchrotron radiation, disordered structures appearing in the transition from (24) to other phases were clarified. Energy tunability of synchrotron X-rays allowed for element-specific analysis of the c(44) structure, providing direct evidence for Ga-As heterodimer formation.

Language	:	Japanese
Journal	:	Hyomen Kagaku
Volume	:	33
Number	:	9
Pages	:	p.507 - 512
Publication Year/Month	:	2012/09
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Paper URL	:	https://doi.org/10.1380/jsssj.33.507
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : AA20120570
JAEA Abstracts No. : 41000067
Paper Submission No. : 11628

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