Study on defects in H ion implanted B2 type Fe-Al alloy using slow positron beam

Komagata, Eiichi*; Kawasuso, Atsuo; Yabuuchi, Atsushi*; Maekawa, Masaki; Batchuluun, C.*; Yasuda, Keisuke*; Ishigami, Ryoya*; Kume, Kyo*; Iwase, Akihiro*; Hori, Fuminobu*

Fe48-at.% Al alloy were implanted with 50 keV H ions to the fluence of 310 $^{16}$ and 110 $^{18}$ /cm at room temperature. Positron annihilation Doppler broadening and lifetime measurements for these alloys have been carried out using slow positron beam apparatus with an energy range of 0.2 to 30.2 keV. The positron annihilation S-parameter decreased by H ion irradiation. Also the positron lifetimes for hydrogen deposited region in the alloy decreased by the irradiation. These results show that implanted H atoms were trapped by vacancy type defects.

Language	:	English
Journal	:	Physics Procedia
Volume	:	35
Number	:
Pages	:	p.75 - 79
Publication Year/Month	:	2012/00
Meeting title	:	International Workshop on Positron Studies of Defects 2011 (PSD-11)
Held date	:	2011/08
Location (city)	:	Delft
Location (country)	:	Netherlands
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.phpro.2012.06.014
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : BB20122699
JAEA Abstracts No. : 41000338
Paper Submission No. : 11974

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