Consideration of single-event gate rupture mechanism in power MOSFET

Kuboyama, Satoshi*; Mizuta, Eiichi*; Ikeda, Naomi*; Abe, Hiroshi; Oshima, Takeshi; Tamura, Takashi*

no abstracts in English

Language	:	English
Journal	:	Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet)
Volume	:
Number	:
Pages	:	p.138 - 141
Publication Year/Month	:	2012/12
Meeting title	:	10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10)
Held date	:	2012/12
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

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Registration No. : BB20122859
JAEA Abstracts No. : 41000941
Paper Submission No. : 12898

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