Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

炭化ケイ素粒子検出器の電荷収集効率に対する放射線誘起欠陥の影響

岩本 直也; 小野田 忍; 牧野 高紘; 大島 武; 児島 一聡*; 野崎 眞次*

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Effects of radiation induced defects on the charge collection efficiency (CCE) of 6H silicon carbide pn diode particle detectors have been studied. The detectors were irradiated with electrons at the energies of 0.1, 0.2, 0.5 and 1 MeV. The CCE of the detectors were measured with 5.5 MeV alpha particles. The CCE of the detector decreases by electron irradiation at energies of 0.2 MeV and higher. Defect named X with an activation energy of 0.5 eV is found in all detectors which showed the decreased CCE. By thermal annealing at low temperatures such as at 200 C, the decreased CCE is recovered and defect X is removed. Therefore it is concluded that defect X is responsible for the decreased CCE of 6H-SiC pn diode particle detectors.