Electronic states in antiferromagnetic compound URhIn investigated by de Haas-van Alphen effect and high pressure resistivity measurements

Matsumoto, Yuji; Haga, Yoshinori   ; Tateiwa, Naoyuki   ; Yamamoto, Etsuji  ; Kimura, Noriaki*; Aoki, Haruyoshi*; Fisk, Z.

Single crystal samples of a new uranium compound URhIn with the well-known tetragonal HoCoGa-type structure have been grown by the indium flux method. Although this compound is isostructural to a Ga-analogue URhGa, the unit cell volume is significantly larger in URhIn. In contrast to non-magnetic behavior in the isostructural URhGa, URhIn has a magnetic ground state with a magnetic transition at 98 K, indicating a drastic difference in electronic states between these compounds.