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Electronic states in antiferromagnetic compound URhIn$$_5$$ investigated by de Haas-van Alphen effect and high pressure resistivity measurements

Matsumoto, Yuji; Haga, Yoshinori  ; Tateiwa, Naoyuki   ; Yamamoto, Etsuji  ; Kimura, Noriaki*; Aoki, Haruyoshi*; Fisk, Z.

Single crystal samples of a new uranium compound URhIn$$_5$$ with the well-known tetragonal HoCoGa$$_5$$-type structure have been grown by the indium flux method. Although this compound is isostructural to a Ga-analogue URhGa$$_5$$, the unit cell volume is significantly larger in URhIn$$_5$$. In contrast to non-magnetic behavior in the isostructural URhGa$$_5$$, URhIn$$_5$$ has a magnetic ground state with a magnetic transition at 98 K, indicating a drastic difference in electronic states between these compounds.

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