Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple-junction solar cells irradiated with protons

陽子線照射されたa-Si/a-SiGe/a-SiGe薄膜三接合太陽電池の劣化挙動

佐藤 真一郎; Beernink, K.*; 大島 武

Sato, Shinichiro; Beernink, K.*; Oshima, Takeshi

a-Si/a-SiGe/a-SiGe三接合太陽電池にさまざまなエネルギーの陽子線を照射し、発電特性の劣化挙動について調べた。陽子線のエネルギーによらずはじき出し損傷線量と劣化量に相関があることから、劣化が従来の結晶Si太陽電池と同様にはじき出し損傷効果に起因していることを明らかにした。また、照射直後の室温での回復効果についても詳細に調べ、量子効率測定を用いて解析したところ、トップ層であるa-Siサブセルの回復がもっとも顕著であることがわかった。

Electrical performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of protons with different energies and their performance recovery at room temperature (RT) just after irradiation are reported. The current-voltage characteristics are measured , and the results show that all the parameters recover with time after proton irradiation is stopped. The degradation is scaled by a unit of displacement damage dose independent of proton energy, indicating that the proton-induced degradation is mainly caused by the displacement damage effects. By analyzing the quantum efficiency variations due to irradiation, it is clarified that the top subcell recovers more markedly at RT than the other subcells, and the recovery of the middle cell is less pronounced.