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C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

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