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Time-resolved observation of oxides on Ge(100)-2$$times$$1 surface at room temperature using synchrotron radiation XPS

Yoshigoe, Akitaka ; Okada, Ryuta; Teraoka, Yuden; Iwai, Yutaro*; Yamada, Yoichi*; Sasaki, Masahiro*

Ge is much attracting as a new material in future electronic devices and therfore oxidation of Ge crystal surfaces is now important. In this conference, we report that evolution of oxides on Ge(100)-2$$times$$1 surface up to saturated oxidation for thermal-O$$_{2}$$ and supersonic O$$_{2}$$ (2.2 eV) beams was studied by time-resolved observation using synchrotron radiation XPS. We found that Ge$$^{1+}$$/Ge$$^{2+}$$ is almost constant from early stages of oxidation to saturation.

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