Radiation-induced currents in 4H-SiC dosimeters for real-time -ray dose rate monitoring

Fujita, Natsuko ; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

A Silicon Carbide (SiC) dosimeter has been exposed to -rays emitted from a $^{60}$ Co source in order to test the response of radiation-induced current in the dose rate ranging from 0.4 Gy/h to 4 kGy/h. The SiC dosimeter in this study is a high purity semi-insulating 4H-SiC with nickel and aluminum electrode. The radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	778-780
Number	:
Pages	:	p.1042 - 1045
Publication Year/Month	:	2014/02
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM 2013)
Held date	:	2013/09
Location (city)	:	Miyazaki
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.778-780.1042
DOI for research data	:
Keywords	:	no keyword
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
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InCites™	:	Percentile:53.76 Category:Crystallography
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Registration No. : BB20131676
JAEA Abstracts No. : 42000495
Paper Submission No. : 14080

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