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Radiation-induced currents in 4H-SiC dosimeters for real-time $$gamma$$-ray dose rate monitoring

Fujita, Natsuko ; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

A Silicon Carbide (SiC) dosimeter has been exposed to $$gamma$$-rays emitted from a $$^{60}$$Co source in order to test the response of radiation-induced current in the dose rate ranging from 0.4 Gy/h to 4 kGy/h. The SiC dosimeter in this study is a high purity semi-insulating 4H-SiC with nickel and aluminum electrode. The radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.

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