Single event gate rupture in SiC MOS capacitors with different gate oxide thicknesses

Deki, Manato*; Makino, Takahiro; Kojima, Kazutoshi*; Tomita, Takuro*; Oshima, Takeshi

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	778-780
Number	:
Pages	:	p.440 - 443
Publication Year/Month	:	2014/02
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM 2013)
Held date	:	2013/09
Location (city)	:	Miyazaki
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.778-780.440
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	徳島大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:82.26 Category:Crystallography
Altmetrics	:

Registration No. : BB20131739
JAEA Abstracts No. : 42000493
Paper Submission No. : 14078

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