(Mn
Fe
)Si(111) epitaxially grown on Ge(111)(MnFe)Si(111)のイオンビーム解析川久保 雄基*; 野口 雄也*; 平田 智昭*; 鳴海 一雅; 境 誠司; 山田 晋也*; 浜屋 宏平*; 宮尾 正信*; 前田 佳均
Kawakubo, Yuki*; Noguchi, Masaya*; Hirata, Tomoaki*; Narumi, Kazumasa; Sakai, Seiji; Yamada, Shinya*; Hamaya, Kohei*; Miyao, Masanobu*; Maeda, Yoshihito
We have investigated crystal quality of Co(MnFe)Si (CMFS) epitaxially grown on Ge(111) by using Rutherford-backscattering spectrometry and an axial-ion-channeling technique. It was found that the CMFS/Ge and CoFeSi (CMFS with x = 1)/Ge have larger static atomic displacement than Fe-based ternary Heusler alloy FeMnSi and FeCoSi/Ge(111). Quaternary alloys may be affected by increase of mixing entropy. Significant disordering at the interface of CMFS with x = 0.75 was found, and discussed on the basis of thermodynamics.
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: | English |
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巻 |
: | 10 |
号 |
: | 12 |
ページ数 |
: | p.1828 - 1831 |
発行年月 |
: | 2013/12 |
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開催年月 |
: | 2013/07 |
開催都市 |
: | Tsukuba |
開催国 |
: | Japan |
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: | no keyword |
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パーセンタイル：0.01 分野：Nanoscience & Nanotechnology |
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