(Mn
Fe
)Si(111) epitaxially grown on Ge(111)Kawakubo, Yuki*; Noguchi, Masaya*; Hirata, Tomoaki*; Narumi, Kazumasa; Sakai, Seiji; Yamada, Shinya*; Hamaya, Kohei*; Miyao, Masanobu*; Maeda, Yoshihito
We have investigated crystal quality of Co(MnFe)Si (CMFS) epitaxially grown on Ge(111) by using Rutherford-backscattering spectrometry and an axial-ion-channeling technique. It was found that the CMFS/Ge and CoFeSi (CMFS with x = 1)/Ge have larger static atomic displacement than Fe-based ternary Heusler alloy FeMnSi and FeCoSi/Ge(111). Quaternary alloys may be affected by increase of mixing entropy. Significant disordering at the interface of CMFS with x = 0.75 was found, and discussed on the basis of thermodynamics.
Language |
: | English |
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Journal |
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Volume |
: | 10 |
Number |
: | 12 |
Pages |
: | p.1828 - 1831 |
Publication Year/Month |
: | 2013/12 |
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Held date |
: | 2013/07 |
Location (city) |
: | Tsukuba |
Location (country) |
: | Japan |
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: |
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Keywords |
: | no keyword |
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