Temperature dependence of strained Si atoms at SiO $_{2}$ /Si(111) interface studied by real-time X-ray photoelectron spectroscopy

Tang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Watanabe, Daiki*; Teraoka, Yuden; Takakuwa, Yuji*

In the present study, the temperature dependence of strained Si atoms at SiO $_{2}$ /Si(111) interface was investigated by real-time Si 2p and O 1s X-ray photoelectron spectroscopy (710 eV) at BL23SU, SPring-8 to clarify the influence of the point defect generation on the interface oxidation. The first and second strainer Si layer at SiO $_{2}$ /Si(111) interface increases in accordance with the changes of the suboxides, Si $^{2+}$ (Si $^{3+}$ ) and Si $^{1+}$ , respectively. The temperature dependence of the interface oxide growth rate is concidered in terms of the O diffusion as well as the interface strain and furthermore is compared with that on SiO $_{2}$ /Si(001) interface. The point defect generation caused by the oxidation-induced strain at SiO $_{2}$ /Si(001) interface was reported to affect the interface oxide growth rate.

Language	:	English
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Meeting title	:	12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures & 21st International Colloquium on Scanning Probe Microscopy (ACSIN-12 & ICSPM-21)
Held date	:	2013/11
Location (city)	:	Tsukuba
Location (country)	:	Japan
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20132427
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Temperature dependence of strained Si atoms at SiO/Si(111) interface studied by real-time X-ray photoelectron spectroscopy

Temperature dependence of strained Si atoms at SiO $_{2}$ /Si(111) interface studied by real-time X-ray photoelectron spectroscopy