Temperature dependence of strained Si atoms at SiO/Si(111) interface studied by real-time X-ray photoelectron spectroscopy

リアルタイムX線光電子分光で研究したSiO/Si(111)界面における歪んだSi原子の温度依存性

Tang, J.*; 西本 究*; 小川 修一*; 吉越 章隆 ; 石塚 眞治*; 渡辺 大輝*; 寺岡 有殿; 高桑 雄二*

Tang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Watanabe, Daiki*; Teraoka, Yuden; Takakuwa, Yuji*

In the present study, the temperature dependence of strained Si atoms at SiO/Si(111) interface was investigated by real-time Si 2p and O 1s X-ray photoelectron spectroscopy (710 eV) at BL23SU, SPring-8 to clarify the influence of the point defect generation on the interface oxidation. The first and second strainer Si layer at SiO/Si(111) interface increases in accordance with the changes of the suboxides, Si(Si) and Si, respectively. The temperature dependence of the interface oxide growth rate is concidered in terms of the O diffusion as well as the interface strain and furthermore is compared with that on SiO/Si(001) interface. The point defect generation caused by the oxidation-induced strain at SiO/Si(001) interface was reported to affect the interface oxide growth rate.