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Report No.

Self-accelerating oxidation on Si(111)7$$times$$7 surfaces studied by real-time photoelectron spectroscopy

Tang, J.*; Nishimoto, Kiwamu*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Watanabe, Daiki*; Teraoka, Yuden; Takakuwa, Yuji*

Long-time oxidation on Si(111)7$$times$$7 surfaces at room temperature has been investigated by real-time photoelectron spectroscopy to clarify the mechanism of the interface oxidation. It is found that the oxidation mode gradually transformed from oxygen adsorption on the Si(111)7$$times$$7 surface in the initial stage to SiO$$_{2}$$ amorphous-like oxidation on the Si(001)2$$times$$1 surface in the interface oxidation. The self-accelerating oxidation with a significant increase of oxidation rate occurred during the interface oxidation on the Si(111)7$$times$$7 surface, where the strained Si atoms were obviously generated at the SiO$$_{2}$$/Si interface. The strains generated at interface layers induce the emission of Si atoms from the interface when strain is over a critical value, which contributes to the interface oxidation due to the reaction activities of both the vacancy sites and emitted Si atoms.



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Category:Chemistry, Physical



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